Advance Technical Information
HiperFET TM
Power MOSFETs
Q3-Class
IXFT50N30Q3
IXFH50N30Q3
V DSS
I D25
R DS(on)
= 300V
= 50A
≤ 80m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-268 (IXFT)
G
S
Symbol
Test Conditions
Maximum Ratings
D (Tab)
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
300
300
± 20
± 30
V
V
V
V
TO-247 (IXFH)
I D25
I DM
I A
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
50
150
50
A
A
A
G
D
S
D (Tab)
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
T C = 25 ° C
1.5
50
690
J
V/ns
W
G = Gate
S = Source
D = Drain
Tab = Drain
T J
-55 ... +150
° C
T JM
150
° C
Features
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
-55 ... +150
300
260
1.13 / 10
4.0
6.0
° C
° C
° C
Nm/lb.in.
g
g
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
Low R DS(on) and Q G
Advantages
High Power Density
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
BV DSS
V GS = 0V, I D = 1mA
300
V
Applications
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
3.5
6.5 V
± 100 nA
10 μ A
500 μ A
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
80 m Ω
Temperature and Lighting Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS100336(05/11)
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